Method for qualifying a semiconductor wafer for subsequent processing
US9064823B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 2013 |
| Grant date | Jun 23, 2015 |
| Priority date | — |
| Expiry date | Jun 5, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for qualifying a semiconductor wafer for subsequent processing, such as thermal processing. A plurality of locations are defined about a periphery of the semiconductor wafer, and one or more properties, such as oxygen concentration and a density of bulk micro defects present, are measured at each of the plurality of locations. A statistical profile associated with the periphery of the semiconductor wafer is determined based on the one or more properties measured at the plurality of locations. The semiconductor wafer is subsequently thermally treated when the statistical profile falls within a predetermined range. The semiconductor wafer is rejected from subsequent processing when the statistical profile deviates from the predetermined range. As such, wafers prone to distortion, warpage, and breakage are rejected from subsequent thermal processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.