Semiconductor device including graphene layer and method of making the semiconductor device
US9064842B2 · kind B2 · utility
11Cited by
4References
23Claims
0Family size
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Key dates
| Filing date | Mar 20, 2012 |
| Grant date | Jun 23, 2015 |
| Priority date | — |
| Expiry date | Nov 29, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/734
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A semiconductor device includes a substrate, first plural contacts formed in the substrate, a graphene layer formed on the substrate and on the first plural contacts and second plural contacts formed on the graphene layer such that the graphene layer is formed between the first plural contacts and the second plural contacts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.