Power semiconductor device

US9064925B2 · kind B2 · utility

Assignee

• ABB TECHNOLOGY AG · CH

Inventors

• Munaf Rahimo · Uezwil, CH
• Arnost Kopta · Zürich, CH
• Christoph Von Arx · Olten, CH
• Maxi Andenna · Fislisbach, CH

Key dates

• Filing date: Sep 24, 2012
• Grant date: Jun 23, 2015
• Expiry date: May 15, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/511

Abstract

A power semiconductor device is disclosed with layers of different conductivity types between an emitter electrode on an emitter side and a collector electrode on a collector side. The device can include a drift layer, a first base layer in direct electrical contact to the emitter electrode, a first source region embedded into the first base layer which contacts the emitter electrode and has a higher doping concentration than the drift layer, a first gate electrode in a same plane and lateral to the first base layer, a second base layer in the same plane and lateral to the first base layer, a second gate electrode on top of the emitter side, and a second source region electrically insulated from the second base layer, the second source region and the drift layer by a second insulating layer.