Semiconductor device with oxide semiconductor

US9064966B2 · kind B2 · utility

Assignee

• Semiconductor Energy Laboratory Co., Ltd. · JP

Inventors

• Shunpei Yamazaki · Setagaya, JP
• Masahiro Takahashi · Atsugi, JP
• Takuya Hirohashi · Atsugi, JP
• Masashi TSUBUKU · Atsugi, JP
• Masashi Oota · Yokohama, JP

Key dates

• Filing date: Dec 27, 2013
• Grant date: Jun 23, 2015
• Expiry date: Dec 27, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/80

Abstract

A highly reliable semiconductor device including an oxide semiconductor is provided. Provided is a semiconductor device including an oxide semiconductor layer, an insulating layer in contact with the oxide semiconductor layer, a gate electrode layer overlapping with the oxide semiconductor layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The oxide semiconductor layer includes a first region having a crystal whose size is less than or equal to 10 nm and a second region which overlaps with the insulating layer with the first region provided therebetween and which includes a crystal part whose c-axis is aligned in a direction parallel to a normal vector of the surface of the oxide semiconductor layer.