Semiconductor light emitting element

US9065004B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Naoharu Sugiyama · Yokohama, JP
• Shigeya Kimura · Yokohama, JP
• Hisashi Yoshida · Koto, JP
• Toshiki Hikosaka · Yokohama, JP
• Jumpei Tajima · Mitaka, JP
• Hajime Nago · Yokohama, JP
• Shinya Nunoue · Ichikawa, JP

Key dates

• Filing date: Jul 3, 2014
• Grant date: Jun 23, 2015
• Expiry date: Jul 3, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

In general, according to one embodiment, a semiconductor light emitting element includes: a first semiconductor layer; a second semiconductor layer; a light emitting layer. The light emitting layer includes a well layer with a thickness of t1 (nanometers). The well layer includes InxGa1-xN having an In composition ratio x higher than 0 and lower than 1. The first semiconductor layer has a tensile strain of not less than 0.02 percent and not more than 0.25 percent in a plane perpendicular to a stacking direction. A peak wavelength λp (nanometers) of light satisfies a relationship of λp=a1+a2×(x+(t1−3.0)×a3). The a1 is not less than 359 and not more than 363. The a2 is not less than 534 and not more than 550. The a3 is not less than 0.0205 and not more than 0.0235.