Patent · US Active

Non-planar inorganic optoelectronic device fabrication

US9065010B2 · kind B2 · utility

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1References
22Claims
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Key dates

Filing dateJun 28, 2012
Grant dateJun 23, 2015
Priority date
Expiry dateJun 28, 2032

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/548

Abstract

A method of fabricating an optoelectronic device includes creating an optoelectronic structure on a first substrate. The optoelectronic structure includes a release layer and a plurality of inorganic semiconductor layers supported by the release layer. The plurality of inorganic semiconductor layers is configured to be active in operation of the optoelectronic device. The plurality of inorganic semiconductor layers are permanently attached to a second substrate, which is flexible. The plurality of inorganic semiconductor layers are released from the first substrate after the attaching step, and the second substrate is deformed to a non-planar configuration.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.