Non-planar inorganic optoelectronic device fabrication
US9065010B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 28, 2012 |
| Grant date | Jun 23, 2015 |
| Priority date | — |
| Expiry date | Jun 28, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
A method of fabricating an optoelectronic device includes creating an optoelectronic structure on a first substrate. The optoelectronic structure includes a release layer and a plurality of inorganic semiconductor layers supported by the release layer. The plurality of inorganic semiconductor layers is configured to be active in operation of the optoelectronic device. The plurality of inorganic semiconductor layers are permanently attached to a second substrate, which is flexible. The plurality of inorganic semiconductor layers are released from the first substrate after the attaching step, and the second substrate is deformed to a non-planar configuration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.