Back channel etch metal-oxide thin film transistor and process
US9065077B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2013 |
| Grant date | Jun 23, 2015 |
| Priority date | — |
| Expiry date | Jun 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/126
Abstract
A method is provided for fabricating an organic light emitting diode (OLED) display. The method includes forming a thin film transistor (TFT) substrate including a first metal layer and a second metal layer. The method also includes depositing a first passivation layer over the second metal layer, and forming a third metal layer over a channel region and a storage capacitor region. The third metal layer is configured to connect to a first portion of the second metal layer that is configured to connect to the first metal layer in a first through-hole through a gate insulator and the first passivation layer. The method further includes depositing a second passivation layer over the third metal layer, and forming an anode layer over the second passivation layer. The anode is configured to connect to a second portion of the third metal layer that is configured to connect to the second metal layer in a second through-hole of the first passivation layer and the second passivation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.