Vapour deposition process for the preparation of a chemical compound
US9067790B2 · kind B2 · utility
2Cited by
3References
22Claims
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Key dates
| Filing date | Jul 20, 2012 |
| Grant date | Jun 30, 2015 |
| Priority date | — |
| Expiry date | Jul 20, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A vapor deposition process for the preparation of a chemical compound, wherein the process comprises providing each component element of the chemical compound as a vapor, and co-depositing the component element vapors on a common substrate, wherein: the vapor of at least one component element is provided using a cracking source; the vapor of at least one other component element is provided using a plasma source; and at least one further component element vapor is provided; wherein the component elements react on the substrate to form the chemical compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.