PCVD method and apparatus
US9067816B2 · kind B2 · utility
2Cited by
86References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2012 |
| Grant date | Jun 30, 2015 |
| Priority date | — |
| Expiry date | Jun 26, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/511
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The disclosed Plasma Chemical Vapor Deposition (PCVD) process uses the injection of plasma-reactive gas to control deposition oscillation and refractive-index oscillation (e.g., alpha oscillation). This PCVD process, which may employ a modified PCVD apparatus, achieves more uniform glass deposition. This, in turn, results in optical preforms and optical fibers having more uniform optical properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.