Compositions to facilitate room temperature growth of an oxide layer on a substrate
US9068112B2 · kind B2 · utility
1Cited by
14References
4Claims
0Family size
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Key dates
| Filing date | Mar 11, 2011 |
| Grant date | Jun 30, 2015 |
| Priority date | — |
| Expiry date | Mar 26, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Disclosed is a method, process, solar cell design, and fabrication technology for high-efficiency, low-cost, crystalline silicon (Si) solar cells including but not restricted to solar grade single crystal Si (c-Si), multi-crystalline Si (mc-Si), poly-Si, and micro-Si solar cells and solar modules. The RTWCG solar cell fabrication technology creates a RTWCG SiOx thin film antireflection coating (ARC) with a graded index of refraction and a selective emitter (SE). The resulting top surface of the SiOx oxide can be textured (TO) concomitant with the growth process or through an additional mild wet chemical step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.