Photolithographic structured thick layer sensor

US9068913B2 · kind B2 · utility

Assignee

• Heraeus Sensor Technology GmbH · DE

Inventors

• Karlheinz Wienand · Aschaffenburg, DE
• Tim Asmus · Allendorf (Lumda), DE
• Angela Maier · Aschaffenburg, DE
• Karlheinz Ullrich · Groß-Umstadt, DE

Key dates

• Filing date: May 6, 2010
• Grant date: Jun 30, 2015
• Expiry date: Aug 24, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T29/49002
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A sensor, particularly an impedance sensor, for example a soot sensor, is provided which has two mutually electrically insulated electrodes, wherein at least one external electrode is formed from a composite of metal and inorganic oxide as a film pattern having a film thickness of 0.5 to 20 μm. The trace width of the film pattern and the spacing between the traces is 5 to 70 μm and the border region around the conductor trace edge varies less than 10 μm. Both electrodes can be arranged adjacent to each other as a film pattern in a plane. Preferably, the sensor has a heater. For mass production, electrodes are produced as a film pattern having a film thickness of 0.5 to 20 μm on electrically insulating oxide bases and, following full-surface imprinting of a metal powder and oxide-containing paste, the electrodes are structured particularly accurately as traces from the printed film. In particular, the film thickness of the printed film is reduced.