Patent · US Active

Nanogap sensor and method of manufacturing the same

US9068914B2 · kind B2 · utility

3Cited by
8References
22Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 6, 2012
Grant dateJun 30, 2015
Priority date
Expiry dateMar 13, 2033

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01N2015/0038
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A nanogap sensor includes a first layer in which a micropore is formed; a graphene sheet disposed on the first layer and including a nanoelectrode region in which a nanogap is formed, the nanogap aligned with the micropore; a first electrode formed on the grapheme sheet; and a second electrode formed on the graphene sheet, wherein the first electrode and the second electrode are connected to respective ends of the nanoelectrode region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.