Mask for near-field lithography and fabrication the same
US9069244B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 14, 2013 |
| Grant date | Jun 30, 2015 |
| Priority date | — |
| Expiry date | Apr 20, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/24
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Methods for fabricating nanopatterned cylindrical photomasks are disclosed. A master pattern having nanometer scale features may be formed on a master substrate. A layer of an elastomer material may be formed on a surface of a transparent cylinder. The master pattern may be transferred from the master to the layer of elastomer material on the surface of the transparent cylinder. Alternatively, a nanopatterned cylindrical photomask may be fabricated by forming a pattern having nanometer scale features on an elastomer substrate and laminating the patterned elastomer substrate to a surface of a cylinder. In another method, a layer of elastomer material may be formed on a surface of a transparent cylinder and a pattern having nanometer scale features may be formed on the elastomer material by a direct patterning process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.