Memristor device with resistance adjustable by moving a magnetic wall by spin transfer and use of said memristor in a neural network
US9070455B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2010 |
| Grant date | Jun 30, 2015 |
| Priority date | — |
| Expiry date | Feb 18, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/14
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A device with adjustable resistance includes two magnetic elements separated by an insulating or semi-conductor element. The resistance of the device depends on the position of a magnetic wall in one of the magnetic elements, the magnetic wall separating two areas of said magnetic element each having a separate homogeneous direction of magnetization. The device comprises means for moving the magnetic wall in the magnetic element by applying a spin-polarized electric current, such that the resistance of the device is adjustable in a continuous range of values. The invention is useful in neuromimetic circuits, neural networks and bio-inspired computers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.