Vertical-type semiconductor devices and methods of manufacturing the same
US9070581B2 · kind B2 · utility
5Cited by
2References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 19, 2013 |
| Grant date | Jun 30, 2015 |
| Priority date | — |
| Expiry date | Nov 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/23
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a vertical-type memory device and a method of manufacturing the vertical-type memory device, the vertical memory device includes an insulation layer pattern of a linear shape provided on a substrate, pillar-shaped single-crystalline semiconductor patterns provided on both sidewalls of the insulation layer pattern and transistors provided on a sidewall of each of the single-crystalline semiconductor patterns. The transistors are arranged in a vertical direction of the single-crystalline semiconductor pattern, and thus the memory device may be highly integrated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.