Patent · US Active

Through-silicon coaxial via structure and method

US9070674B2 · kind B2 · utility

11Cited by

4References

20Claims

0Family size

Assignee

Avago Technologies General IP (Singapore) Pte. Ltd. · SG

Inventors

Adam Gallegos · Fort Collins, US
Thomas E. Cynkar · Sunnyvale, US

Key dates

Filing date	Jul 23, 2013
Grant date	Jun 30, 2015
Priority date	—
Expiry date	Jul 23, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2224/16225
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A silicon interconnect structure includes a peripheral outer via in a silicon substrate, a solid core inner via in the silicon substrate, the solid core inner via coaxial with the peripheral outer via to form a coaxial via structure, a metal interconnect stack formed over a first surface of the peripheral outer via and the solid core inner via, at least portions of the metal interconnect stack forming an electrical connection with the peripheral outer via and the solid core inner via, first contact pads on a surface of the metal interconnect stack, and second contact pads on an exposed surface of the peripheral outer via and the solid core inner via.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.