Semiconductor device structure, method for manufacturing the same, and method for manufacturing Fin

US9070719B2 · kind B2 · utility

Assignee

• INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Huicai Zhong · San Jose, US
• Qingqing Liang · Fishkill, US
• Jun Luo · Chongqing, CN
• Chao Zhao · Thuwal, SA

Key dates

• Filing date: Nov 18, 2011
• Grant date: Jun 30, 2015
• Expiry date: Nov 9, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/011

Abstract

A semiconductor device structure, a method for manufacturing the same, and a method for manufacturing a semiconductor fin are disclosed. In one embodiment, the method for manufacturing the semiconductor device structure comprises: forming a fin in a first direction on a semiconductor substrate; forming a gate line in a second direction, the second direction crossing the first direction on the semiconductor substrate, and the gate line intersecting the fin with a gate dielectric layer sandwiched between the gate line and the fin; forming a dielectric spacer surrounding the gate line; and performing inter-device electrical isolation at a predetermined position, wherein isolated portions of the gate line form independent gate electrodes of respective devices.