Patent · US Active

Nanopillar field-effect and junction transistors with functionalized gate and base electrodes

US9070733B2 · kind B2 · utility

12Cited by

22References

11Claims

0Family size

Assignee

CALIFORNIA INSTITUTE OF TECHNOLOGY · US

Inventors

Aditya Rajagopal · Irvine, US
Chieh-feng Chang · Taipei, TW
Oliver Plettenburg · Kelkheim, DE
Stefan Petry · Kelkheim, DE
Axel Scherer · Laguna Beach, US
Charles L. Tschirhart · Pasadena, US

Key dates

Filing date	Jul 12, 2013
Grant date	Jun 30, 2015
Priority date	—
Expiry date	Jul 12, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/66
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

Systems and methods for molecular sensing are described. Molecular sensors are described which are based on field-effect or bipolar junction transistors. These transistors have a nanopillar with a functionalized layer contacted to either the base or the gate electrode. The functional layer can bind molecules, which causes an electrical signal in the sensor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.