Semiconductor device and method for forming the same
US9070777B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2012 |
| Grant date | Jun 30, 2015 |
| Priority date | — |
| Expiry date | Jul 6, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02554
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a substrate, a semiconductor layer including an oxide semiconductor disposed on the substrate, a barrier layer disposed on the semiconductor layer and an insulating layer disposed on the barrier layer. The semiconductor layer includes an oxide semiconductor, and the barrier layer includes a material having a lower standard electrode potential than a semiconductor material of the oxide semiconductor, a lower electron affinity than the semiconductor material of the oxide semiconductor, or a larger band gap than the semiconductor material of the oxide semiconductor. The insulating layer includes at least one of a silicon-based oxide or a silicon-based nitride, and the insulating layer includes a portion which contacts with an upper surface of the barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.