Metal oxide TFT with improved temperature stability
US9070779B2 · kind B2 · utility
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Key dates
| Filing date | Dec 18, 2012 |
| Grant date | Jun 30, 2015 |
| Priority date | — |
| Expiry date | Feb 3, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
A metal oxide thin film transistor includes a metal oxide semiconductor channel with the metal oxide semiconductor having a conduction band with a first energy level. The transistor further includes a layer of passivation material covering at least a portion of the metal oxide semiconductor channel. The passivation material has a conduction band with a second energy level equal to, or less than 0.5 eV above the first energy level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.