Nitride semiconductor light-emitting device and method for producing the same

US9070805B2 · kind B2 · utility

Assignee

• SHARP KABUSHIKI KAISHA · JP

Inventors

• Mayuko Fudeta · Mihara, JP
• Satoshi Komada · Osaka, JP
• Ryu Kaihara · Fukuyama, JP

Key dates

• Filing date: Jun 26, 2012
• Grant date: Jun 30, 2015
• Expiry date: Jun 26, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/036

Abstract

A nitride semiconductor light-emitting device has a first conductive-type nitride semiconductor layer, a superlattice layer provided on the first conductive-type nitride semiconductor layer, an active layer provided on the superlattice layer, and a second conductive-type nitride semiconductor layer provided on the active layer. An average carrier concentration of the superlattice layer is higher than an average carrier concentration of the active layer.