Semiconductor light emitting device
US9070835B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 2, 2014 |
| Grant date | Jun 30, 2015 |
| Priority date | — |
| Expiry date | Jan 2, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/82
Abstract
A semiconductor light emitting device including a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a first electrode connected to the first conductivity type semiconductor layer; a second electrode including a contact layer connected to the second conductivity type semiconductor layer, a capping layer disposed on the contact layer, and a metal buffer layer disposed on the capping layer, the metal buffer layer encompasses an upper and lateral surface of the capping layer; a first insulating layer disposed on the light emitting structure such that the first and second electrodes are exposed; and a second insulating layer disposed on the first insulating layer such that at least a portion of the first electrode and at least a portion of the metal buffer layer are exposed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.