Semiconductor light emitting device and method for manufacturing same
US9070841B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2013 |
| Grant date | Jun 30, 2015 |
| Priority date | — |
| Expiry date | Feb 28, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
According to one embodiment, a semiconductor light emitting device includes: a stacked body, a wavelength conversion layer, a first metal layer, and a first insulating section. The stacked body includes: a first and a second semiconductor layers; and a first light emitting layer provided between the first and the second semiconductor layers. The wavelength conversion layer is configured to convert wavelength of light emitted from the first light emitting layer. The first semiconductor layer is placed between the first light emitting layer and the wavelength conversion layer. The first metal layer is electrically connected to the second semiconductor layer. The first insulating section is provided between a first side surface and a first side surface portion of the first metal layer and between the wavelength conversion layer and the first side surface portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.