Variable resistance element and semiconductor storage device
US9070876B2 · kind B2 · utility
1Cited by
1References
12Claims
0Family size
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Key dates
| Filing date | Nov 15, 2011 |
| Grant date | Jun 30, 2015 |
| Priority date | — |
| Expiry date | Dec 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
A variable resistance element is formed by sandwiching a metal oxide layer whose resistance changes between a pair of electrodes and the metal oxide layer includes a pair of variable resistance layers whose resistances change by formation of a current path and a branching suppression layer which is sandwiched between the variable resistance layers and suppresses branching of the current path.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.