Quantum dot light emitting element and method for manufacturing the same
US9073752B2 · kind B2 · utility
11Cited by
1References
10Claims
0Family size
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Key dates
| Filing date | May 20, 2011 |
| Grant date | Jul 7, 2015 |
| Priority date | — |
| Expiry date | Jun 6, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K50/115
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a quantum dot light emitting element which can form a quantum light emitting layer configured of charge transporting particles and quantum dots and a charge transporting layer in a solution process, to reduce process expense, and a method for manufacturing the same. The quantum dot light emitting element includes a substrate, an anode formed on the substrate, a quantum light emitting layer formed on the anode, the quantum light emitting layer having charge transporting particles and quantum dots mixed therein, and a cathode formed on the quantum light emitting layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.