Patent · US Active

Low-dopant polycrystalline silicon chunk

US9073756B2 · kind B2 · utility

4Cited by

3References

18Claims

0Family size

Assignee

Wacker Chemie AG · DE

Inventors

Hanns Wochner · Burghausen, DE
Andreas Killinger · Echterdingen, DE
Reiner Pech · Vilshofen an der Donau, DE

Key dates

Filing date	Dec 11, 2012
Grant date	Jul 7, 2015
Priority date	—
Expiry date	Jun 27, 2033

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC01B33/037
WIPO fieldMaterials, metallurgy
WIPO sectorChemistry

Abstract

The invention provides a polycrystalline silicon chunk having a concentration of 1-50 ppta of boron and 1-50 ppta of phosphorus at the surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.