Method for depositing a thin layer and product thus obtained
US9073781B2 · kind B2 · utility
9Cited by
21References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 4, 2008 |
| Grant date | Jul 7, 2015 |
| Priority date | — |
| Expiry date | Jan 4, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02T50/60
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
One subject of the invention is a process for the treatment of at least one thin continuous film deposited on a first side of a substrate, characterized in that said at least one thin film is raised to a temperature of at least 300° C. while maintaining a temperature not exceeding 150° C. on the opposite side of said substrate to said first side, so as to increase the degree of crystallization of said thin film while keeping it continuous and without a step of melting said thin film.Another subject of the invention is the material that can be obtained by this process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.