Non-volatile memory device
US9076502B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 6, 2014 |
| Grant date | Jul 7, 2015 |
| Priority date | — |
| Expiry date | Mar 6, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a non-volatile memory device includes a memory cell array and a coil provided closely to the memory cell array. The memory cell array includes memory cells provided above an underlying layer, and a first interconnection. The memory cells are aligned in a first direction perpendicular to the underlying layer. The first interconnection extends in a second direction perpendicular to the first direction. The coil includes a winding including a second interconnection extending in the second direction and sharing a central axis with the first interconnection, a first plug extending in the first direction and connected to the second interconnection, a third interconnection electrically connected to another end of the first plug and extending in a direction parallel to the underlying layer, and a second plug having one end electrically connected to the third interconnection, and extending in a direction opposite to the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.