Method for programming a nonvolatile memory device
US9076516B2 · kind B2 · utility
4Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2012 |
| Grant date | Jul 7, 2015 |
| Priority date | — |
| Expiry date | Oct 16, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/71
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided is a method for programming a nonvolatile memory device, which includes memory cells arranged in a plurality of rows. The programming method includes alternately selecting word lines to program data at a first page portion and a second page portion associated with the memory cells. After the first and second page portions are programmed, the method includes programming data at a third page portion associated with the memory cells according to an order in which word lines are arranged. The word lines may be sequentially selected one by one from a word line adjacent to a ground selection line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.