Method of forming an oxide layer and method of manufacturing semiconductor device including the oxide layer
US9076647B2 · kind B2 · utility
7Cited by
3References
21Claims
0Family size
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Key dates
| Filing date | Apr 28, 2012 |
| Grant date | Jul 7, 2015 |
| Priority date | — |
| Expiry date | Apr 28, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an oxide layer. The method includes: forming a layer of reaction-inhibiting functional groups on a surface of a substrate; forming a layer of precursors of a metal or a semiconductor on the layer of the reaction-inhibiting functional groups; and oxidizing the precursors of the metal or the semiconductor in order to obtain a layer of a metal oxide or a semiconductor oxide. According to the method, an oxide layer having a high thickness uniformity may be formed and a semiconductor device having excellent electrical characteristics may be manufactured.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.