Electrochemical etching of semiconductors
US9076657B2 · kind B2 · utility
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11References
6Claims
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Key dates
| Filing date | Jun 22, 2013 |
| Grant date | Jul 7, 2015 |
| Priority date | — |
| Expiry date | Jun 22, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Semiconductors are electrochemically etched in solutions containing sources of bifluoride and nickel ions. The electrochemical etching may form pores in the surface of the semiconductor in the nanometer range. The etched semiconductor is then nickel plated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.