Methods of forming semiconductor devices, including forming patterns by performing an oxidation process
US9076687B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 2014 |
| Grant date | Jul 7, 2015 |
| Priority date | — |
| Expiry date | May 28, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
Methods of forming semiconductor devices are provided. A method of forming a semiconductor device may include forming a structure including insulating layers and gate layers that are alternately and repeatedly stacked on a substrate. The method may include forming through-holes in the structure. The method may include forming first patterns on sidewalls of the gate layers, by performing an oxidation process. The method may include forming second patterns on portions of the substrate, by performing the oxidation process. The method may include removing the second patterns. Moreover, the method may include forming semiconductor patterns in the through-holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.