Oxynitride channel layer, transistor including the same and method of manufacturing the same
US9076721B2 · kind B2 · utility
1Cited by
7References
17Claims
0Family size
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Key dates
| Filing date | Feb 19, 2013 |
| Grant date | Jul 7, 2015 |
| Priority date | — |
| Expiry date | Feb 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
A transistor includes a channel layer including an oxynitride semiconductor doped with at least one of hafnium (Hf) and zirconium (Zr), a source on one side portion of the channel layer and a drain on another side portion of the channel layer, a gate corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.