RF MEMS isolation, series and shunt DVC, and small MEMS
US9076808B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2012 |
| Grant date | Jul 7, 2015 |
| Priority date | — |
| Expiry date | Aug 31, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/009
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention generally relates to an architecture for isolating an RF MEMS device from a substrate and driving circuit, series and shunt DVC die architectures, and smaller MEMS arrays for high frequency communications. The semiconductor device has one or more cells with a plurality of MEMS devices therein. The MEMS device operates by applying an electrical bias to either a pull-up electrode or a pull-down electrode to move a switching element of the MEMS device between a first position spaced a first distance from an RF electrode and a second position spaced a second distance different than the first distance from the RF electrode. The pull-up and/or pull-off electrode may be coupled to a resistor to isolate the MEMS device from the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.