Thin film transistor substrate with pixel matrix
US9076875B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2013 |
| Grant date | Jul 7, 2015 |
| Priority date | — |
| Expiry date | Jul 25, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A thin film transistor substrate includes a thin film transistor, a source wire, an upper-layer source wire, and a pixel electrode. The thin film transistor includes: a source electrode and a drain electrode located to be spaced from each other on the same plane; a semiconductor film located to straddle those electrodes; an insulating film located to cover at least the source electrode, the drain electrode, and the semiconductor film; an upper-layer source electrode and an upper-layer drain electrode located on the insulating film and respectively connected to the semiconductor film through contact holes; and a gate electrode located below or above the semiconductor film. The source wire extends from the source electrode. The upper-layer source wire extends from the upper-layer source electrode. The pixel electrode is electrically connected to the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.