Selective chemical etching process
US9076918B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Mar 1, 2012 |
| Grant date | Jul 7, 2015 |
| Priority date | — |
| Expiry date | Jun 29, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present invention relates to a process for selective wet chemical etching of a thin-film substrate comprising a CIGS surface layer. The present invention also relates to a process for producing cells in series for thin-film photovoltaic modules, which process implements the selective wet chemical etching process according to the invention. The present invention furthermore relates to a process for creating small patterns, such as for example monolithic interconnects, in thin-film photovoltaic devices, which process implements the selective wet chemical etching process according to the invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.