Process of forming an aluminum p-doped surface region of a semiconductor substrate
US9076919B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Nov 2, 2012 |
| Grant date | Jul 7, 2015 |
| Priority date | — |
| Expiry date | Feb 6, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for the formation of at least one aluminum p-doped surface region of a semiconductor substrate comprising the steps:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.