Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates
US9076920B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2011 |
| Grant date | Jul 7, 2015 |
| Priority date | — |
| Expiry date | Feb 25, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
An aqueous alkaline etching and cleaning composition for treating the surface of silicon substrates, the said composition comprising: (A) a quaternary ammonium hydroxide; and (B) a component selected from the group consisting of water-soluble acids and their water-soluble salts of the general formulas (I) to (V): (R1—S03-)nXn+ (I), R—P032−(Xn+)3-n (II); (RO—S03-)nXn+ (III), RO—P032−(Xn+)3-n, (IV), and [(RO)2P02−]nXn+ (V); wherein the n=1 or 2; X is hydrogen or alkaline or alkaline-earth metal; the variable R1 is an olefinically unsaturated aliphatic or cycloaliphatic moiety and R is R1 or an alkylaryl moiety; the use of the composition for treating silicon substrates, a method for treating the surface of silicon substrates, and methods for manufacturing devices generating electricity upon the exposure to electromagnetic radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.