Light-emitting device manufacturing method
US9076923B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2012 |
| Grant date | Jul 7, 2015 |
| Priority date | — |
| Expiry date | Dec 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/835
Abstract
A method for manufacturing a light-emitting device comprising the steps of: providing a first substrate, a chip area, and a street area; forming a light-emitting structure on the first substrate; forming a conductive structure between the first substrate and the light-emitting structure; removing a part of the light-emitting structure in the street area to expose a sidewall of the light-emitting structure in the chip area; forming a first passivation layer on the light-emitting structure in the chip area; forming a second passivation layer on the conductive structure in the street area, on the sidewalls of the light-emitting structure, and on the sidewalls of the first passivation layer; forming a through-hole in the first passivation layer, and forming an electrode in the through-hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.