Semiconductor light emitting device and method for manufacturing the same
US9076928B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 2013 |
| Grant date | Jul 7, 2015 |
| Priority date | — |
| Expiry date | Jul 12, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/10
Abstract
A semiconductor light emitting device is provided and includes a protective element including a first lower conductivity-type semiconductor layer and a second lower conductivity-type semiconductor layer. First and second lower electrodes are connected to the first lower conductivity-type semiconductor layer and the second lower conductivity-type semiconductor layer, respectively. A light emitting structure includes a first upper conductivity-type semiconductor layer, an active layer, and a second upper conductivity-type semiconductor layer sequentially formed on the protective element. First and second upper electrodes are connected to the first upper conductivity-type semiconductor layer and the second upper conductivity-type semiconductor layer, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.