Single crystal silicon pulling device, method for preventing contamination of silicon melt, and device for preventing contamination of silicon melt
US9080251B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 17, 2012 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Nov 13, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1088
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A velocity of Ar gas flow passing through between a lower end of a cylindrical body and a thermal shielding body is influenced by arrangement of a pulling path of single crystal silicon, a cylindrical body, and a thermal shielding body. Accordingly, the velocity of the Ar gas flow passing through between a lower end of the cylindrical body and the thermal shielding body is controlled by adjusting a relative position of the pulling path of the single crystal silicon, the cylindrical body, and the thermal shielding body. As described above, dust falling off to silicon melt can be reduced, thereby preventing deterioration in quality of the single crystal silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.