Patent · US Active

Electronic component for high temperatures

US9080967B2 · kind B2 · utility

0Cited by
2References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 1, 2011
Grant dateJul 14, 2015
Priority date
Expiry dateNov 17, 2031

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01N27/414
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A chemically sensitive field effect transistor includes a substrate, a conductor track structure situated on the substrate, and a functional layer which is contacted via the conductor track structure. To be able to form a thin, oxidation-stable and temperature-stable conductor track structure, the conductor track structure is made of a metal mixture which includes platinum and one or more metals selected from the group made up of rhodium, iridium, ruthenium, palladium, osmium, gold, scandium, yttrium, lanthanum, the lanthanides, titanium, zirconium, hafnium, niobium, tantalum, chromium, tungsten, rhenium, iron, cobalt, nickel, copper, boron, aluminum, gallium, indium, silicon, and germanium.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.