Electronic component for high temperatures
US9080967B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2011 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Nov 17, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/414
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A chemically sensitive field effect transistor includes a substrate, a conductor track structure situated on the substrate, and a functional layer which is contacted via the conductor track structure. To be able to form a thin, oxidation-stable and temperature-stable conductor track structure, the conductor track structure is made of a metal mixture which includes platinum and one or more metals selected from the group made up of rhodium, iridium, ruthenium, palladium, osmium, gold, scandium, yttrium, lanthanum, the lanthanides, titanium, zirconium, hafnium, niobium, tantalum, chromium, tungsten, rhenium, iron, cobalt, nickel, copper, boron, aluminum, gallium, indium, silicon, and germanium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.