Method and apparatus for ion beam polishing
US9082587B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 2012 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Jul 25, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/20
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for forming a polished facet between an edge and a face of a sample, involves removing a first portion of the sample by directing an ion beam onto the edge adjacent the first portion along an ion beam axis to leave the polished facet. The ion beam axis lies on an ion beam plane oriented at a glancing incident angle, preferably from 1° to 30°, to a sample plane defined by and parallel to the first face. The ion beam is directed to flow from the edge towards the first face. Also disclosed is a sample preparation apparatus comprising a chamber adapted for evacuation with a sample holder adapted to hold a sample comprising a first face bounded by an edge, and an ion gun arranged to direct an ion beam along an ion beam axis towards the sample.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.