Methods and apparatuses for forming semiconductor films
US9082619B2 · kind B2 · utility
3Cited by
18References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2012 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Jul 9, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02628
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Described herein are systems and methods method for forming semiconductor films. In some embodiment, the methods comprising depositing the source solution containing a solvent and plurality of types of metal ionic species and a second type on a substrate heated to a temperature at or above the boiling point of the solvent. In some embodiments, methods and apparatus for exposing a substrate to a gas are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.