Manufacturing method of semiconductor device
US9082639B2 · kind B2 · utility
3Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 4, 2012 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Mar 2, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/199
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A drain of a first transistor is formed by performing ion implantation on a semiconductor substrate using a first member as a mask for a gate electrode of the first transistor. Further, ion implantation is performed on the gate electrode of the second transistor after thinning a second member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.