Substrate processing apparatus, method for manufacturing substrate, and method for manufacturing semiconductor device
US9082694B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2012 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Apr 30, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67109
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate processing apparatus includes: a processing chamber that accommodates a substrate; a heating portion that is provided so as to surround a accommodating region of the substrate within the processing chamber; a gas nozzle that is provided inside the heating portion and that supplies a processing gas to the accommodating region of the substrate; and a gas heating mechanism that is provided inside the heating portion and that supplies the processing gas from an upstream side of the gas nozzle into the gas nozzle. A ratio of a flow channel circumferential length to a flow channel cross-sectional area in a gas flow channel of the gas heating mechanism is larger than a ratio of a flow channel circumferential length to a flow channel cross-sectional area in a gas flow channel of the gas nozzle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.