Semiconductor device and method for manufacturing semiconductor device
US9082707B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 9, 2011 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Aug 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor element substrate, wherein an electrode pattern is formed on one surface of an insulating substrate and a back-surface electrode is formed on the other surface of the insulating substrate; a stress-relaxation adhesive layer made of resin that covers at least a part of a portion of the surface of the insulating substrate where the electrode pattern and the back-surface electrode are not formed; and a semiconductor element affixed, using a bonding material, to the surface of the electrode pattern opposite the insulating substrate, and a first sealing resin member which covers the semiconductor element and the semiconductor element substrate, and a modulus of elasticity of the stress-relaxation adhesive layer is lower than that of the first sealing resin member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.