Precursor composition of oxide semiconductor and thin film transistor substrate including oxide semiconductor
US9082795B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Sep 4, 2014 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Sep 4, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor substrate according to an exemplary embodiment of the present invention includes a semiconductor layer including metal disposed on an insulating substrate, a gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode overlapping the semiconductor layer, wherein the metal in the semiconductor layer comprises indium (In), zinc (Zn), and tin (Sn), and a molar ratioof indium (In) to the metals in the semiconductor layer is less than about 20%, and more specifically, the molar ratioof indium (In) of the metals in the semiconductor layer is about 5% to about 13%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.