Semiconductor devices and power conversion systems
US9082814B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2012 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | Dec 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
A semiconductor device includes first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type that is formed near a surface of the first semiconductor layer; a first main electrode that is electrically connected to the second semiconductor layer; a third semiconductor layer of the second conductivity type that neighbors the first semiconductor layer; a fourth semiconductor layer of the first conductivity type that is selectively disposed in an upper portion of the third semiconductor layer; a second main electrode that is electrically connected to the third semiconductor layer and the fourth semiconductor layer; a trench whose side face is in contact with the third semiconductor layer and the fourth semiconductor layer; a gate electrode that is formed along the side face of the trench by a sidewall of polysilicon; and a polysilicon electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.