Method for forming copper interconnection structures
US9082821B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Oct 3, 2011 |
| Grant date | Jul 14, 2015 |
| Priority date | — |
| Expiry date | May 14, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49204
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a copper interconnection structure includes the steps of forming an opening in an insulating layer, forming a copper alloy layer including a metal element on an inner surface of the opening, and conducting a heat treatment on the copper alloy layer so as to form a barrier layer. An enthalpy of oxide formation for the metal element is lower than the enthalpy of oxide formation for copper. The heat treatment is conducted at temperatures ranging from 327° C. to 427° C. and for a time period ranging from 1 minute to 80 minutes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.